Focused ion beam processing
US4639301A · kind A · utility
90Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 24, 1985 |
| Grant date | Jan 27, 1987 |
| Priority date | — |
| Expiry date | Apr 24, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3056
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus is described which makes possible the precise sputter etching and imaging of insulating and other targets, using a finely focused beam of ions produced from a liquid metal ion source. This apparatus produces and controls a submicron beam of ions to precisely sputter etch the target. A beam of electrons directed on the target neutralizes the charge created by the incident ion beam. Imaging of the target surface and ultra-precise control of the etching process is achieved by monitoring the particles that are sputtered from the target surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.