CVD heat source
US4640224A · kind A · utility
44Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 1985 |
| Grant date | Feb 3, 1987 |
| Priority date | — |
| Expiry date | Aug 5, 2005 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/481
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A baffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.