Semiconductor optoelectro transducer
US4641167A · kind A · utility
10Cited by
1References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 29, 1983 |
| Grant date | Feb 3, 1987 |
| Priority date | — |
| Expiry date | Jul 29, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/196
Abstract
A semiconductor optoelectro transducer is highly sensitive in infrared to far infrared regions and is operable at high speed. To this end, the optoelectro transducer is formed by a static induction transistor or a static induction thyristor and an element which are excited by light of longer wavelength than that of light corresponding to the energy of the energy gap of a channel region, is added to the channel region which receives light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.