Self-aligned lateral bipolar transistors
US4641170A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 1985 |
| Grant date | Feb 3, 1987 |
| Priority date | — |
| Expiry date | Aug 5, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0273
Abstract
An integrated circuit structure which includes small area lateral bipolar and method for making the same is described. A semiconductor body, such as a monocrystalline silicon wafer, having surface regions thereof isolated from other such regions by a pattern of dielectric isolation is provided. At least two narrow widths PN junction regions are located within at least one of the surface regions. Each PN junction has a width dimension substantially that of its electrical contact. Substantially vertical conformal conductive layers electrically ohmic contact each of the PN junction regions. The PN junction regions are the emitter and collector regions for a lateral bipolar transistor. A base PN junction base region of an opposite conductivity is located between and contiguous to the emitter and the collector junctions. Substantially horizontal conductive layers are in electrical contact with an edge of each of the vertical conductive layers and separated from the surface regions by a first electrical insulating layer. A second insulating layer covers the conformal conductive layers. The horizontal conductive layer is patterned so as to have electrically separated conductive lines from…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.