Line change-over circuit and semiconductor memory using the same
US4641285A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 1984 |
| Grant date | Feb 3, 1987 |
| Priority date | — |
| Expiry date | Aug 13, 2004 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The line change-over circuit suitable for the semiconductor memory having a redundancy memory column comprises a pair of transfer gate elements provided between a first node to which a first signal to be transmitted is supplied and a pair of transmission lines, first and second switch elements. The paired transfer gate elements are controlled on a switch in complementary manner each other according to a transfer signal. The first switch element is controlled on a switch according to the transfer signal, and the second switch element is controlled on a switch according to the first signal transmitted to one of the paired transmission lines. The first switch element turns one of the transmission lines to a fixed potential like ground potential when it is kept on, and the second switch element turns the other of the transmission lines to a fixed potential when it is kept on. The line change-over circuit in the above configuration is effective to prevent a floating state of the paired transmission lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.