Method for forming deposited film
US4645684A · kind A · utility
15Cited by
0References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 3, 1985 |
| Grant date | Feb 24, 1987 |
| Priority date | — |
| Expiry date | Oct 3, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a deposited film comprises forming in a vacuum chamber housing a substrate therein a deposited film containing silicon on the substrate by subjecting a gas represented by the general formula: ##STR1## wherein R.sup.1, R.sup.2, R.sup.3 and R.sup.4, can be the same or different and are each independently hydrogen or a hydrocarbon group, to polymerization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.