Semiconductor device provided with electrically floating control electrode
US4651189A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 1984 |
| Grant date | Mar 17, 1987 |
| Priority date | — |
| Expiry date | Dec 12, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/291
Abstract
A gate turn-off thyristor and a transistor are disclosed, each of which comprises: a semiconductor substrate including at least three semiconductor layers between a pair of principal surfaces, adjacent ones of the semiconductor layers being different in conductivity type from each other, a first one of the semiconductor layers being formed of at least one strip-shaped region with a constant width, a second one of the semiconductor layers being exposed to a first principal surface of the semiconductor substrate together with the strip-shaped region; a first main electrode kept in ohmic contact with the strip-shaped region at the first principal surface; a first control electrode kept in ohmic contact with the second semiconductor layer on one side of the strip-shaped region in the direction of the width thereof and connected directly to a control terminal; a second control electrode kept in ohmic contact with the second semiconductor layer on the other side of the strip-shaped region in the direction of the width thereof and connected to the control terminal through the first control electrode and the resistance of the second semiconductor layer between the first control electrode a…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.