Method for patterning silicon dioxide with high resolution in three dimensions
US4652334A · kind A · utility
35Cited by
9References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 1986 |
| Grant date | Mar 24, 1987 |
| Priority date | — |
| Expiry date | Mar 6, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31155
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method is provided for selectively etching ion-implanted silicon dioxide. A masked silicon dioxide layer is exposed to an ion beam of controlled dose and energy. The mask is removed and the silicon dioxide layer is brought in contact with an aqueous ammoniacal hydrogen peroxide solution which preferentially removes the ion-bombarded region with minimal etching of the unimplanted silicon dioxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.