Process for depositing a conductive oxide layer
US4652463A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 1, 1985 |
| Grant date | Mar 24, 1987 |
| Priority date | — |
| Expiry date | Feb 1, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/953
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The specification discloses a low-temperature process for depositing a layer of a conductive oxide of a chosen metal, such as tin oxide, on the surface of a substrate while simultaneously avoiding damage to the substrate. The process comprises exposing the substrate to a selected vapor phase reactant containing the chosen metal, such as tetramethyl tin, in the presence of neutral, charge-free oxygen atoms formed in a manner which avoids the generation of charged particles and high energy radiation that would damage the substrate. The oxygen atoms react with the vapor phase reactant to form the conductive oxide, which deposits as a layer on the surface of the substrate. In a preferred process embodiment, the neutral oxygen atoms are photochemically generated. This process is especially useful for depositing a layer of a transparent conductive oxide on the surface of a radiation-hardened device while maintaining the radiation-hardness of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.