Monolithic planar doped barrier limiter
US4654609A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 1985 |
| Grant date | Mar 31, 1987 |
| Priority date | — |
| Expiry date | Feb 25, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/605
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A passive millimeter wave image guide power limiter comprising a length of ielectric transmission line or waveguide for millimeter wave frequencies located on a relatively thin conductive ground plane forming thereby an image guide and including a planar doped barrier diode structure formed in the dielectric transmission line with the planar doped barrier structure being integrally grown in a slot milled in the constituent material, i.e. gallium arsenide, of the waveguide transversely across the width dimension thereof so as to be oriented perpendicular to the flow of RF power being propagated along its length dimension. The planar doped barrier structure becomes conductive at a predetermined power level to reflect any further incident RF power back toward the power source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.