Semiconductor processing technique for generating dangling surface bonds and growing epitaxial layer by excimer laser
US4655849A · kind A · utility
27Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 1985 |
| Grant date | Apr 7, 1987 |
| Priority date | — |
| Expiry date | May 22, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor processing technique is disclosed for reasonantly reacting with a semiconductor wafer substrate and cleaving surface atomic bonds to create dangling bonds. The substrate is irradiated with excimer pulsed ultraviolet laser radiation at a discrete designed wavelength to resonantly photolytically cleave surface bonds and create the dangling bonds. This enhances further processing operations such as single crystalline silicon deposition and enhanced bonding and growth thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.