James A. Benjamin
41Patents
16h-index
24Co-inventors
81Inventor score
Filing activity: Oct 4, 1974 → Apr 29, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5999139A | Two-axis satellite antenna mounting and tracking assembly | Electricity | 44 | Expired |
| US4541001A | Bidirectional power FET with substrate-referenced shield | Electricity | 42 | Expired |
| US4668304A | Dopant gettering semiconductor processing by excimer laser | Emerging Cross-Sectional Technologies | 35 | Expired |
| US4546367A | Lateral bidirectional notch FET with extended gate insulator | Electricity | 35 | Expired |
| US4685976A | Multi-layer semiconductor processing with scavenging between layers by excimer laser | Emerging Cross-Sectional Technologies | 32 | Expired |
| US3936864A | Microwave transistor package | Electricity | 32 | Expired |
| US4655849A | Semiconductor processing technique for generating dangling surface bonds and growing epitaxial layer by excimer laser | Emerging Cross-Sectional Technologies | 27 | Expired |
| US4670063A | Semiconductor processing technique with differentially fluxed radiation at incremental thicknesses | Emerging Cross-Sectional Technologies | 26 | Expired |
| US4670064A | Generating high purity ions by non-thermal excimer laser processing | Emerging Cross-Sectional Technologies | 25 | Expired |
| US4574209A | Split gate EFET and circuitry | Emerging Cross-Sectional Technologies | 24 | Expired |
| US4612465A | Lateral bidirectional notch FET with gates at non-common potentials | Electricity | 24 | Expired |
| US4574208A | Raised split gate EFET and circuitry | Emerging Cross-Sectional Technologies | 23 | Expired |
| US6415140B1 | Null elimination in a space diversity antenna system | Electricity | 22 | Expired |
| US4553151A | Bidirectional power FET with field shaping | Electricity | 21 | Expired |
| US4577052A | AC Solar cell | Emerging Cross-Sectional Technologies | 18 | Expired |
| US4542396A | Trapped charge bidirectional power FET | Electricity | 17 | Expired |
| US4016643A | Overlay metallization field effect transistor | Electricity | 16 | Expired |
| US4622568A | Planar field-shaped bidirectional power FET | Electricity | 16 | Expired |
| US4107720A | Overlay metallization multi-channel high frequency field effect transistor | Electricity | 15 | Expired |
| US4622569A | Lateral bidirectional power FET with notched multi-channel stacking and with dual gate reference terminal means | Electricity | 15 | Expired |
| US4670764A | Multi-channel power JFET with buried field shaping regions | Electricity | 14 | Expired |
| US7352889B2 | Automated storage and retrieval device and method | Physics | 13 | Expired |
| US4574207A | Lateral bidirectional dual notch FET with non-planar main electrodes | Electricity | 13 | Expired |
| US4571513A | Lateral bidirectional dual notch shielded FET | Electricity | 13 | Expired |
| US4571606A | High density, high voltage power FET | Electricity | 13 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.