Ion implantation process
US4655875A · kind A · utility
33Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 4, 1986 |
| Grant date | Apr 7, 1987 |
| Priority date | — |
| Expiry date | Mar 4, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/945
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Ions having a high energy is implanted using a mask of a stacked film consisting of a film formed from an amorphous material and a film formed from a metal having a large mass number. In this way, penetration of ions can be prohibited by a mask having a far smaller thickness than that of the conventional mask. Thus ions having a high energy can be implanted with a very high accuracy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.