Kiyonori Ohyu
16Patents
9h-index
42Co-inventors
72Inventor score
Filing activity: Nov 5, 1985 → Sep 21, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6503794B1 | Semiconductor integrated circuit device and method for manufacturing the same | Emerging Cross-Sectional Technologies | 66 | Expired |
| US6743673B2 | Semiconductor integrated circuitry and method for manufacturing the circuitry | Emerging Cross-Sectional Technologies | 49 | Expired |
| US4729964A | Method of forming twin doped regions of the same depth by high energy implant | Electricity | 33 | Expired |
| US4655875A | Ion implantation process | Emerging Cross-Sectional Technologies | 33 | Expired |
| US4808546A | SOI process for forming a thin film transistor using solid phase epitaxy | Emerging Cross-Sectional Technologies | 27 | Expired |
| US6291847A | Semiconductor integrated circuit device and process for manufacturing the same | Electricity | 20 | Expired |
| US4742025A | Method of fabricating a semiconductor device including selective etching of a silicide layer | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5426326A | Semiconductor device including arrangement for reducing junction degradation | Electricity | 12 | Expired |
| US6734479B1 | Semiconductor integrated circuit device and the method of producing the same | Electricity | 10 | Expired |
| US7081649B2 | Semiconductor integrated circuitry and method for manufacturing the circuitry | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7186632B2 | Method of fabricating a semiconductor device having a decreased concentration of phosphorus impurities in polysilicon | Electricity | 3 | Expired |
| US5066355A | Method of producing hetero structure | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6800888B2 | Semiconductor integrated circuitry and method for manufacturing the circuitry | Emerging Cross-Sectional Technologies | 2 | Expired |
| US6573546B2 | Semiconductor integrated circuit device and process for manufacturing the same | Electricity | 1 | Expired |
| US7700431B2 | Method for manufacturing a semiconductor device having polysilicon plugs | Electricity | 0 | Active |
| US7737505B2 | Semiconductor device and method of forming the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.