Electronic component using a silicon carbide substrate and a method of making it
US4657825A · kind A · utility
10Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1985 |
| Grant date | Apr 14, 1987 |
| Priority date | — |
| Expiry date | Dec 23, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12896
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The bond strength between a silicon carbide substrate and a metal layer comprised of a series of metal films is improved without detrimentally affecting other properties of such a device by interposing a layer of silicon, Si.sub.2 Mo or mixtures thereof between the substrate and the first metal film in the layer which is preferably Ti, Zr or Hf.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.