Atsushi Kanda
35Patents
9h-index
72Co-inventors
78Inventor score
Filing activity: Jul 8, 1977 → Dec 7, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10144126B2 | Robot system and method of operating a robot system | Physics | 116 | Active |
| US7285863B2 | Pad structures including insulating layers having a tapered surface | Electricity | 32 | Expired |
| US4262710A | Oil supply means for tanks containing blended fuel and oil | Performing Operations; Transporting | 19 | Expired |
| USD622676S1 | LED display device | General | 15 | Expired |
| US4705102A | Boiling refrigerant-type cooling system | Electricity | 15 | Expired |
| US4191866A | Three-function switch for a motorcycle | Electricity | 14 | Expired |
| US6884868B1 | Cyclic hexapeptides having antibiotic activity | Human Necessities | 11 | Expired |
| US4657825A | Electronic component using a silicon carbide substrate and a method of making it | Emerging Cross-Sectional Technologies | 10 | Expired |
| US4402351A | Oil supply means for tanks containing blended fuel and oil | Performing Operations; Transporting | 10 | Expired |
| US4582813A | Sintered alumina product | Chemistry; Metallurgy | 9 | Expired |
| US5656113A | Method of manufacturing a multilayered wiring substrate of aluminum nitride having a high dielectric layer | Emerging Cross-Sectional Technologies | 8 | Expired |
| US4723863A | Method and means for joining a ceramic shaft and metal sleeve | Chemistry; Metallurgy | 8 | Expired |
| US5709928A | Multilayered wiring substrate of aluminum nitride having a high dielectric layer and method of manufacture thereof | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6818539B1 | Semiconductor devices and methods of fabricating the same | Electricity | 4 | Expired |
| US6780701B2 | Method for manufacturing high-breakdown voltage transistor and low-breakdown voltage transistor on the same substrate | Electricity | 3 | Expired |
| US6720222B2 | Method of manufacturing semiconductor device | Electricity | 2 | Expired |
| US5589429A | Aluminum nitride sintered body and process for producing the same | Chemistry; Metallurgy | 2 | Expired |
| US6638804B2 | Method of manufacturing semiconductor device with high and low breakdown transistors | Electricity | 2 | Expired |
| US7187227B2 | Driver circuit | Electricity | 2 | Expired |
| US6355800B1 | Process for producing aminopiperazine derivatives | Chemistry; Metallurgy | 1 | Expired |
| US8174838B2 | Display device allowing repeated removal and installation of screw | Electricity | 1 | Active |
| US10365206B2 | Surface condition monitoring apparatus | Physics | 1 | Active |
| US6291680A | Production process | Chemistry; Metallurgy | 1 | Expired |
| US12243862B2 | Optical receiving circuit | Electricity | 0 | Active |
| US6916714B2 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, IN WHICH A HIGH-BREAKDOWN-VOLTAGE MOS TRANSISTOR AND A LOW-BREAKDOWN-VOLTAGE MOS TRANSISTOR ARE FORMED ON AN IDENTICAL SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURED THEREBY | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.