Semiconductor memory device with a laser programmable redundancy circuit
US4658379A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 1984 |
| Grant date | Apr 14, 1987 |
| Priority date | — |
| Expiry date | Oct 30, 2004 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device with a laser programmable redundancy circuit, which includes: a plurality of decoders for selecting a row or column of the memory; at least one spare decoder which is selected instead of a decoder connected to a faulty memory cell; a link element inserted in series with the precharging transistor and connected between the power supply and the decoder output line; a signal generator which generates a non-selection signal for making the object decoder unselected only when a spare decoder is selected, the signal generator being provided in the spare decoder; and a transistor, having a gate to which the non-selection signal is input, with the drain and the source thereof being connected to the decoder output and ground, respectively, the transistor being provided in the decoder.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.