Method of fabricating semiconductor device having low resistance non-alloyed contact layer
US4662060A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 1985 |
| Grant date | May 5, 1987 |
| Priority date | — |
| Expiry date | Dec 13, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/951
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device having a non-alloyed contact layer. An active region is formed in a substrate and the non-alloyed contact layer is formed in the active region, the barrier height of source and drain electrodes for the non-alloyed contact layer being lower than the barrier height of the source and drain electrodes for the active region or the substrate. The preferred method of forming the non-alloyed contact layer is high dose implantation of an element selected in accordance with the substrate material. For example, if the substrate is GaAs the non-alloyed contact layer is formed by implanting In, and if the substrate is InP the non-alloyed contact layer is formed by implanting As or Sb.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.