Olaleye A. Aina
9Patents
7h-index
11Co-inventors
60Inventor score
Filing activity: Dec 13, 1985 → Aug 18, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5208462A | Wide bandwidth solid state optical source | Electricity | 129 | Expired |
| US4960718A | MESFET device having a semiconductor surface barrier layer | Electricity | 26 | Expired |
| US6992319B2 | Ultra-linear multi-channel field effect transistor | Electricity | 17 | Expired |
| US4662060A | Method of fabricating semiconductor device having low resistance non-alloyed contact layer | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5242843A | Method for making a heterojunction bipolar transistor with improved high frequency response | Emerging Cross-Sectional Technologies | 12 | Expired |
| US7276723B2 | Ultra-linear multi-channel field effect transistor | Electricity | 11 | Expired |
| US5187110A | Field effect transistor-bipolar transistor darlington pair | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5086282A | Field effect transistor-bipolar transistor Darlington pair | Electricity | 4 | Expired |
| US5683936A | Reactive ion etched assisted gold post process | Emerging Cross-Sectional Technologies | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.