Three dimensional structures of active and passive semiconductor components
US4663648A · kind A · utility
1Cited by
1References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 19, 1984 |
| Grant date | May 5, 1987 |
| Priority date | — |
| Expiry date | Dec 19, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/01
Abstract
The disclosure relates to a three dimensional semiconductor structure formed in a semiconductor substrate wherein electrical components, both active and passive, are formed on the substrate surface as well as in grooves formed in the substrate at an angle and extending to the surface. The substrate surface is designed to lie in a predetermined crystallographic plane of the substrate material and the grooves extend in a predetermined crystallographic direction from said plane, this being accomplished by orientation dependent etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.