Metallizing process for semiconductor devices
US4663820A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 11, 1984 |
| Grant date | May 12, 1987 |
| Priority date | — |
| Expiry date | Jun 11, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metallizing system for silicon surfaces consists solely of two layers of nickel and silver, respectively. Approximately 2 microns of the underlying silicon surface is removed prior to metallization to ensure removal of an oxygen-saturated layer of silicon before the nickel layer is deposited. The assembly is heated sufficiently that the nickel layer forms a nickel-silicide layer at the silicon surface. The metallizing adheres to the bare treated silicon but does not adhere to adjacent oxide coatings and easily lifts off of oxide-coated surfaces. The metallizing is solderable, makes ohmic contact to the silicon, regardless of its conductivity type and survives subsequent alloy processing temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.