Method of depositing semiconductor films by free radical generation
US4664937A · kind A · utility
34Cited by
3References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 21, 1986 |
| Grant date | May 12, 1987 |
| Priority date | — |
| Expiry date | Apr 21, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of depositing a semiconductor alloy film onto a substrate by activating at least one group of free radicals and incorporating desired ones of the activated group into the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.