Method of fabricating photopolymer isolation trenches in the surface of a semiconductor wafer
US4665010A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1985 |
| Grant date | May 12, 1987 |
| Priority date | — |
| Expiry date | Apr 29, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/168
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming dielectric filled isolation trenches in a semiconductor substrate wherein the substrate is coated with a photopolymer layer which also fills the trenches. Depending on the type of radiation used, the photopolymer layer is masked except for the regions directly above the filled trenches. The structure is exposed to radiation through the mask, which is then removed. The unexposed portions of the photopolymer layer are washed away and heat is gradually applied to shrink the remaining photopolymer into the trenches until it becomes coplanar with the semiconductor substrate surface. A mask is used if the radiation is ultraviolet light, but no mask is required if electron beam or x-radiation is employed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.