Dopant gettering semiconductor processing by excimer laser
US4668304A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 1985 |
| Grant date | May 26, 1987 |
| Priority date | — |
| Expiry date | Apr 10, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/093
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dopant gettering semiconductor processing technique is disclosed for selectively activating an otherwise benign reactant to remove dopant from a semiconductor wafer substrate. Excimer pulsed ultraviolet laser radiation is provided at a discrete designated pulsed wavelength corresponding to a discrete designated gettering excitation energy of the otherwise benign reactant photochemically breaking bonds of the reactant such that the reactant is photolytically activated to remove dopant from the substrate, without thermally driven pyrolytic reaction. The bonds of a reactant gas are photochemically broken to produce gettering agents reacting with the substrate to remove dopant by forming a gaseous compound liberated from the substrate and benign to and unactivated by the discrete designated wavelength of the excimer pulsed ultraviolet laser radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.