Semiconductor device
US4668970A · kind A · utility
25Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 2, 1985 |
| Grant date | May 26, 1987 |
| Priority date | — |
| Expiry date | Dec 2, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/683
Abstract
In a semiconductor device which includes an insulation film through which a charge can tunnel, a gate insulation film of a material different from the material of said insulation film or having a thickness different from that of said insulation film, and a floating gate extending over said tunnelable insulation film, the improvement wherein at least two sides of said tunnelable region are bounded by a device separation oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.