Generating high purity ions by non-thermal excimer laser processing
US4670064A · kind A · utility
25Cited by
3References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 10, 1985 |
| Grant date | Jun 2, 1987 |
| Priority date | — |
| Expiry date | Apr 10, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/083
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor ion implantation processing technique is disclosed for implanting high purity, high flux density ions in a semiconductor wafer substrate. A reactant gas is irradiated with excimer pulsed ultraviolet laser radiation at a discrete designated pulsed wavelength corresponding to a discrete designated ionization excitation energy of the gas photochemically breaking bonds of the gas to nonthermally photolytically ionize the gas. The ions are then accelerated by an electric field for subsequent implantation into a surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.