Patent · US Expired

Process of developing radiation imaged photoresist with alkaline developer solution including a carboxylated surfactant

US4670372A · kind A · utility

6Cited by
12References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 15, 1984
Grant dateJun 2, 1987
Priority date
Expiry dateOct 15, 2004

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/322
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A positive photoresist metal ion aqueous developer is provided that gives a high contrast to the photoresist. The developer disclosed comprises a formulation of aqueous alkali-base such as potassium hydroxide and a carboxylated surfactant. The incorporation of the carboxylated surfactant provides the unexpected increase in the contrast of the photoresist. The addition of the carboxylated surfactant increases the gamma from a typical photoresist gamma (.gamma.) of 3 or less to a gamma greater than 5. The high contrast photoresist provides linewidth control and affords improved process latitude in photoresist imaging. The linewidth control is particularly critical in cases where fine lines are to be defined in the resist that covers steps of topography on the coated substrate. The higher the contrast, the less affected the resist by the topography, provided the exposure is adequate to expose the resist. The process latitude afforded by the high contrast is a result of the ability to over develop (develop longer) the exposed resist without affecting the unexposed resist in the adjacent areas.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.