Method for producing high quality germanium-germanium nitride interfaces for germanium semiconductors and device produced thereby
US4671845A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 22, 1985 |
| Grant date | Jun 9, 1987 |
| Priority date | — |
| Expiry date | Mar 22, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/083
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to the production of a stable insulator of a germanium and a device produced thereby. A germanium substrate is provided with a layer of silicon nitride deposited on one of the outer surfaces. Ionized nitrogen is implanted by an ion beam into the silicon nitride layer. An electric field is applied across the substrate and layer. In one embodiment the substrate and layer are annealed while maintaining the electric field, the electric field is removed, and a second annealing step grows the germanium nitride insulator layer subcutaneously. In another embodiment the subcutaneous germanium nitride insulator layer is grown during a single annealing step by continued application of the electric field to the substrate and the layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.