Method for control of etch profile
US4671849A · kind A · utility
54Cited by
7References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 6, 1985 |
| Grant date | Jun 9, 1987 |
| Priority date | — |
| Expiry date | May 6, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for precisely controlling the profile of an opening etched in a layer of material, for example, an insulating layer. In one embodiment, wherein a silicon dioxide layer is reactive ion etched through a photoresist mask, the concentration of a reactive species in an etchant gas is changed during the etching process to change the slope of the opening, the upper sidewall portion of the opening having a shallow slope and the lower sidewall portion of the opening having a steep slope. The final slope of the opening formed by this method is independent of the initial slopes of the images developed in the photoresist mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.