Tin etch process
US4675073A · kind A · utility
35Cited by
1References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 7, 1986 |
| Grant date | Jun 23, 1987 |
| Priority date | — |
| Expiry date | Mar 7, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76895
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma etch process for etching titanium nitride selectively with respect to titanium silicides. A reducing electrode, a low flow rate, and a non-copious fluorine source (such as CF.sub.4) are used to achieve a fluorine-deficient plasma. Preferably the substrate temperature is allowed to rise above 50 C during etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.