Member having substrate and light-receiving layer of A-Si:Ge film and A-Si film with non-parallel interface with substrate
US4675263A · kind A · utility
1Cited by
4References
59Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 8, 1985 |
| Grant date | Jun 23, 1987 |
| Priority date | — |
| Expiry date | Mar 8, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light-receiving member comprises light-receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms and a second layer comprising an amorphous material containing silicon atoms and exhibiting photoconductivity provided on a substrate successively from the substrate side, said light-receiving layer having at least one pair of non-parallel interfaces within a short range and said non-parallel interfaces being arranged in a large number in at least one direction within the plane perpendicular to the layer thickness direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.