Member having light receiving layer of A-Si: Ge (C,N,O) A-Si/surface antireflection layer with non-parallel interfaces
US4678733A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 1985 |
| Grant date | Jul 7, 1987 |
| Priority date | — |
| Expiry date | Oct 11, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light receiving member comprises a light receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms, a second layer comprising an amorphous material containing silicon atoms and exhibiting photoconductivity and a surface layer having reflection preventive function provided on a substrate successively from the substrate side, said light receiving layer containing at least one selected from oxygen atoms, carbon atoms and nitrogen atoms and having at least one pair of non-parallel interfaces within a short range and said non-parallel interfaces being arranged in a large number in at least one direction within the plane perpendicular to the layer thickness direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.