Semiconductor laser
US4679200A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 1985 |
| Grant date | Jul 7, 1987 |
| Priority date | — |
| Expiry date | Jan 16, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/185
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser includes a current blocking layer formed on a substrate, a first cladding layer formed on the current blocking layer, an active layer formed on the first cladding layer, and a second cladding layer formed on the active layer. An indent is formed in the current blocking layer near the center of the laser element, and a V-shaped groove is formed in the current blocking layer across the indent. A gain guide structure is formed where the indent is formed, and an index guide structure is formed near the cleaved facet. A stable transverse mode laser emission is ensured without the influence of the return beam reflected from the disc surface, and the attendant mode competition noise is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.