Sadayoshi Matsui
64Patents
10h-index
30Co-inventors
74Inventor score
Filing activity: Oct 31, 1984 → May 9, 1997
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4806454A | Method for the formation of a diffraction grating | Emerging Cross-Sectional Technologies | 42 | Expired |
| US4658403A | Optical element in semiconductor laser device having a diffraction grating and improved resonance characteristics | Electricity | 32 | Expired |
| US4890293A | Semiconductor laser device | Electricity | 25 | Expired |
| US5450237A | Hyperresolution optical system | Physics | 19 | Expired |
| US4997747A | Method for the formation of a diffraction grating | Emerging Cross-Sectional Technologies | 19 | Expired |
| US4903274A | Semiconductor laser array device | Electricity | 17 | Expired |
| US4692206A | Method for producing a semiconductor laser device having a buried heterostructure | Electricity | 16 | Expired |
| US4856015A | Semiconductor laser array device | Electricity | 12 | Expired |
| US5789773A | Semiconductor light-emitting device | Electricity | 10 | Expired |
| US4716129A | Method for the production of semiconductor devices | Electricity | 10 | Expired |
| US4817104A | Semiconductor laser array device | Electricity | 10 | Expired |
| US6206969A | Method and apparatus for fabricating semiconductor | Chemistry; Metallurgy | 9 | Expired |
| US4799227A | Semiconductor laser device having a buried heterostructure | Electricity | 9 | Expired |
| US4806778A | Micro-displacement measuring apparatus using a semiconductor laser | Physics | 8 | Expired |
| US4745615A | Semiconductor laser device with a diffraction grating | Electricity | 8 | Expired |
| US4679200A | Semiconductor laser | Electricity | 8 | Expired |
| US4730329A | Semiconductor laser device | Electricity | 8 | Expired |
| US4772082A | Semiconductor laser array device | Electricity | 7 | Expired |
| US4660983A | Apparatus for measuring reflectivities of resonator facets of semiconductor laser | Electricity | 7 | Expired |
| US4791651A | Semiconductor laser array device | Electricity | 7 | Expired |
| US5255279A | Semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device | Emerging Cross-Sectional Technologies | 7 | Expired |
| US4747109A | Semiconductor laser array device | Electricity | 7 | Expired |
| US5271028A | Semiconductor laser device | Electricity | 7 | Expired |
| US4908830A | Buried type semiconductor laser device | Electricity | 6 | Expired |
| US4813051A | Semiconductor laser array device | Electricity | 6 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.