Process for controlling mobile ion contamination in semiconductor devices
US4679308A · kind A · utility
6Cited by
13References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 14, 1984 |
| Grant date | Jul 14, 1987 |
| Priority date | — |
| Expiry date | Dec 14, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/061
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of protecting semiconductor integrated circuit from mobile ion contamination. In one embodiment a gettering agent is implanted into a dielectric layer. In an alternative embodiment a gettering agent is implanted into a photoresist layer which is ashed in an oxygen based plasma, leaving the gettering agent on the surface underlying the photoresist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.