Conductivity modulated MOS transistor device
US4680604A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 1986 |
| Grant date | Jul 14, 1987 |
| Priority date | — |
| Expiry date | Nov 13, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
There is a conductivity modulated MOS transistor comprising: a p-type region formed in the surface area of an n.sup.- -type layer formed on a p.sup.+ -type layer; an n.sup.+ -type region formed in the surface area of this p-type region to face the n.sup.- -type layer; and a gate electrode formed through a gate insulation layer over a surface region of the p-type region sandwiched between the n.sup.- -type layer and the n.sup.+ -type region. This MOS transistor further comprises a p.sup.+ -type region formed inside the p-type region, at least under the n.sup.+ -type region and having a higher impurity concentration than the p-type region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.