Kiminori Watanabe
25Patents
14h-index
16Co-inventors
74Inventor score
Filing activity: May 28, 1985 → Dec 31, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5105243A | Conductivity-modulation metal oxide field effect transistor with single gate structure | Electricity | 101 | Expired |
| US4672407A | Conductivity modulated MOSFET | Electricity | 66 | Expired |
| US4878957A | Dielectrically isolated semiconductor substrate | Emerging Cross-Sectional Technologies | 58 | Expired |
| US5068700A | Lateral conductivity modulated MOSFET | Electricity | 57 | Expired |
| US4680604A | Conductivity modulated MOS transistor device | Electricity | 48 | Expired |
| US4928155A | Lateral conductivity modulated MOSFET | Electricity | 47 | Expired |
| US4980743A | Conductivity-modulation metal oxide semiconductor field effect transistor | Electricity | 33 | Expired |
| US5086332A | Planar semiconductor device having high breakdown voltage | Electricity | 31 | Expired |
| US4782372A | Lateral conductivity modulated MOSFET | Electricity | 30 | Expired |
| US5286984A | Conductivity modulated MOSFET | Mechanical Engineering; Lighting; Heating | 22 | Expired |
| US5093701A | Conductivity modulated MOSFET | Electricity | 16 | Expired |
| US6489653B2 | Lateral high-breakdown-voltage transistor | Electricity | 15 | Expired |
| US4881120A | Conductive modulated MOSFET | Electricity | 14 | Expired |
| US5086323A | Conductivity modulated MOSFET | Electricity | 14 | Expired |
| US5168333A | Conductivity-modulation metal oxide semiconductor field effect transistor | Electricity | 12 | Expired |
| US5463231A | Method of operating thyristor with insulated gates | Electricity | 9 | Expired |
| US5237186A | Conductivity-modulation metal oxide field effect transistor with single gate structure | Electricity | 7 | Expired |
| US5428228A | Method of operating thyristor with insulated gates | Electricity | 7 | Expired |
| US5315134A | Thyristor with insulated gate | Electricity | 4 | Expired |
| US5124773A | Conductivity-modulation metal oxide semiconductor field effect transistor | Electricity | 4 | Expired |
| US6025622A | Conductivity modulated MOSFET | Electricity | 4 | Expired |
| US6707104B2 | Lateral high-breakdown-voltage transistor | Electricity | 3 | Expired |
| US5780887A | Conductivity modulated MOSFET | Electricity | 3 | Expired |
| US6989568B2 | Lateral high-breakdown-voltage transistor having drain contact region | Electricity | 2 | Expired |
| USRE32784E | Conductivity modulated MOS transistor device | General | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.