Device fabrication method using spin-on glass resins
US4683024A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 1985 |
| Grant date | Jul 28, 1987 |
| Priority date | — |
| Expiry date | Feb 4, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/95
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A new method for fabricating a device, such as a semiconductor device, is disclosed. The method includes the step of patterning a substrate with a trilevel resist containing a spin-deposited substitute for the conventional central, silicon dioxide region. This substitute includes an organosilicon glass resin in combination with metal-and-oxygen containing material. The inventive method prevents the losses of linewidth control, and avoids the pattern degradation due to undesirably many pinholes, of previous such methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.