Semiconductor device structure and processing
US4683159A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 1986 |
| Grant date | Jul 28, 1987 |
| Priority date | — |
| Expiry date | Jun 17, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24926
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An composite semiconductor device and a method of making is described. The device includes a semiconductor body with a first surface having a predetermined orientation with respect to a crystalline structure in the semiconductor body and a layer of thin film material covering at least a portion of the first surface. A depression formed in the first surface of the body with the layer of thin film material defines one or more members which have a predetermined configuration bridging the depression. First and second openings in the thin film layer flank each member such that an anisotropic etch placed on the openings undercuts the member to form the depression in a manner which substantially prevents undercutting of the semiconductor body below the thin film material at the boundaries of the predetermined configuration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.