Apparatus for plasma assisted etching
US4685999A · kind A · utility
8Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 24, 1985 |
| Grant date | Aug 11, 1987 |
| Priority date | — |
| Expiry date | Oct 24, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3244
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus for reactive ion etching or plasma etching wherein the wafer faces downward. The process gas is supplied through a distributor which is below the wafer and has orifices pointing away from the wafer. The vacuum (exhaust) port is below the distributor, so that there is no bulk gas flow near the face of the wafer. Preferably transport of the process gasses and their products to the face of the wafer is dominated by diffusion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.