Gaseous etching process
US4689115A · kind A · utility
6Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 26, 1985 |
| Grant date | Aug 25, 1987 |
| Priority date | — |
| Expiry date | Apr 26, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process is described for preparing III-V compound semiconductor devices (e.g., gallium arsenide devices) in which gaseous bromine or chlorine is used as an etch. This etch procedure provides highly uniform etching. High selectivity for etching gallium arsenide in the presence of gallium aluminum arsenide may be obtained by the addition of oxidant gas such as water vapor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.