Patent · US Expired

CMOS high voltage switch

US4689495A · kind A · utility

27Cited by
7References
15Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJun 17, 1985
Grant dateAug 25, 1987
Priority date
Expiry dateJun 17, 2005

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C16/12
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A CMOS high voltage switch for interfaceing between a decoder output and an input to an erasable, programmable read-only-memory includes an inverter for receiving an input signal from the output of the decoder. A N-channel MOS pass transistor has a conduction path and a gate electrode. One end of the conduction path is connected to the output of the inverter, and the other end of the conduction path is connected to an output node. The gate electrode of the pass transistor is connected to a first lower supply potential. A pumping device is connected to the other end of the conduction path for pumping the output node to a first higher voltage during a first mode of operation. A P-channel MOS switching transistor is also connected to the other end of the conduction path for switching the output node to a second lower voltage during a second mode of operation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.