Oxide-capped titanium silicide formation
US4690730A · kind A · utility
69Cited by
3References
55Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 1986 |
| Grant date | Sep 1, 1987 |
| Priority date | — |
| Expiry date | Jun 20, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A cap oxide (or oxide/nitride) prevents silicon outdiffusion during the reaction step which forms direct-react titanium silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.