Thomas E. Tang
15Patents
12h-index
16Co-inventors
67Inventor score
Filing activity: Mar 7, 1986 → Aug 5, 1991
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4657628A | Process for patterning local interconnects | Emerging Cross-Sectional Technologies | 183 | Expired |
| US4975756A | SRAM with local interconnect | Electricity | 173 | Expired |
| US5010032A | Process for making CMOS device with both P+ and N+ gates including refractory metal silicide and nitride interconnects | Emerging Cross-Sectional Technologies | 90 | Expired |
| US4788160A | Process for formation of shallow silicided junctions | Emerging Cross-Sectional Technologies | 70 | Expired |
| US4963502A | Method of making oxide-isolated source/drain transistor | Electricity | 70 | Expired |
| US4690730A | Oxide-capped titanium silicide formation | Electricity | 69 | Expired |
| US4746219A | Local interconnect | Electricity | 60 | Expired |
| US4920073A | Selective silicidation process using a titanium nitride protective layer | Emerging Cross-Sectional Technologies | 59 | Expired |
| US4676866A | Process to increase tin thickness | Electricity | 57 | Expired |
| US5043778A | Oxide-isolated source/drain transistor | Emerging Cross-Sectional Technologies | 44 | Expired |
| US4890141A | CMOS device with both p+ and n+ gates | Emerging Cross-Sectional Technologies | 42 | Expired |
| US5198387A | Method and apparatus for in-situ doping of deposited silicon | Electricity | 37 | Expired |
| US5076206A | Vertical LPCVD reactor | Chemistry; Metallurgy | 11 | Expired |
| US5166770A | Silicided structures having openings therein | Electricity | 10 | Expired |
| US5101764A | Method and apparatus for integrating optical sensor into processor | Electricity | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.