Semiconductor device having high breakdown voltage
US4691223A · kind A · utility
17Cited by
3References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 6, 1985 |
| Grant date | Sep 1, 1987 |
| Priority date | — |
| Expiry date | Nov 6, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/905
Abstract
A semiconductor device includes a semiconductor substrate having at least three semiconductor layers of alternately different conductivity types between a pair of principal surfaces. A pair of main electrodes are kept in low-resistance contact with the outermost ones of the semiconductor layers. A surface-passivation insulating film is provided on an exposed surface of the semiconductor substrate. A resistive material sheet is provided on the insulating film and connected electrically to semiconductor layers having their potentials substantially equal to the main electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.