Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings
US4692205A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 1986 |
| Grant date | Sep 8, 1987 |
| Priority date | — |
| Expiry date | Jan 31, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31721
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The use of silicon-containing polyimide as an oxygen etch barrier in a metal lift-off process and as an oxygen etch stop in the fabrication of multi-layer metal structures is described. In practice, a lift-off layer is applied on a substrate, followed by a layer of silicon-containing polyimide and a layer of photoresist. The photoresist is lithographically patterned, and the developed image is transferred into the silicon-containing polyimide layer with a reactive ion etch using a CF.sub.4 /O.sub.2 gas mixture. The pattern is transferred to the lift-off layer in a reactive ion etch process using oxygen. Subsequent blanket metal evaporation followed by removal of the lift-off stencil results in the desired metal pattern on the substrate. In an alternate embodiment, the silicon-containing polyimide can be doped with a photoactive compound reducing the need for a separate photoresist imaging layer on the top.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.