Method for producing a semiconductor laser device having a buried heterostructure
US4692206A · kind A · utility
16Cited by
2References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 1986 |
| Grant date | Sep 8, 1987 |
| Priority date | — |
| Expiry date | Feb 19, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2275
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for producing a semiconductor laser device having a buried heterostructure includes a multi-layered crystal structure, containing an active layer for laser oscillation, on a p-substrate, said multi-layered crystal structure having a striped mesa-portion, a p-n-p multi-layered structure surrounding said mesa-portion and a burying layer disposed on an upper face of said striped mesa-portion. The unique structure results in a heterojunction at each of both side faces of said active layer in said mesa-portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.