Process for manufacturing semiconductor devices containing microbridges
US4692994A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1986 |
| Grant date | Sep 15, 1987 |
| Priority date | — |
| Expiry date | Apr 29, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/91
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for manufacturing semiconductor devices, comprising steps for obtaining a multilayered structure consisting of semiconductors and insulating films, by forming a microbridge which consists of a semiconductor in the form of a connecting bar or a one-side supported bar, and by forming an insulating film by oxidizing the exposed surface of the microbridge. The semiconductor device manufactured by the process of the invention exhibits good interface properties between the insulating film and the semiconductor layer. The invention makes it possible to easily manufacture a variety of MOSFETs with the SOI structure, which exhibit excellent characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.