Conductivity modulated semiconductor structure
US4694313A · kind A · utility
26Cited by
14References
33Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 19, 1985 |
| Grant date | Sep 15, 1987 |
| Priority date | — |
| Expiry date | Feb 19, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/233
Abstract
An insulated gate field effect transistor having a minority carrier diode and a majority carrier diode formed in the drain region. The minority diode modulates the resistance of the drain while the majority diode decreases sensitivity to latch up. Alternatively, a minority diode only is formed in the drain and separated from the drain contact and source by the body and body contact. An improved SCR is formed using the two diode structures as the fourth layer. An improved diode can also be formed having both low turn-on and low series resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.