Thin film light emitting diode, photonic circuit employing said diode imager employing said circuits
US4695859A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 1986 |
| Grant date | Sep 22, 1987 |
| Priority date | — |
| Expiry date | Oct 20, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/81
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A light emitting, thin film p-i-n diode characterized by aligned valence bands at the p-i interface and aligned conduction bands at the n-i interface and preferably including a layer of p-doped microcrystalline semiconductor alloy material. A photonic circuit fabricated as an integrated, solid state structure which includes a multilayered thin film light emitting element formed of semiconductor alloy material and a multilayered thin film light detecting element formed of semiconductor alloy material. The photonic circuit is particularly adapted for use as an integrated large area imager adapted to generate electrical signals corresponding to the image on an image-bearing document.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.